Dependence of Oxide Electric Field and Gate Electrode Work Function on the Reliability of Thin MOS Gate Oxides

Dependence of Oxide Electric Field and Gate Electrode Work Function on the Reliability of Thin MOS Gate Oxides

Author(s):

Publication title:

Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-6

Pub. Year:

1999

Page(from):

3

Page(to):

10

Pages:

8

Pub. info.:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772280 [1566772281]

Language:

English

Call no.:

E23400/99-6

Type:

Conference Proceedings

Details

TDL ID:	ZA00013936
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	5th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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