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Interdependence and Significance of Hot Carrier Stress (HCS) and Gate Induced (GIDL) Drain Leakage Current in BC SOT pMOSFETs

Author(s):
Publication title:
Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-3
Pub. date:
1999
Page(from):
272
Page(to):
275
Pages:
4
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772259 [1566772257]
Language:
English
Call no.:
E23400/99-3
Type:
Conference Proceedings

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