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Highly Suppressed Threshold Voltage Roll-off Characteristics of the 4 nm-Thick SOI n- MOSFETs in the 40-135 nm Gate Length Regime

Author(s):
Suzuki, E ( (Electrotech Laboratory) )
Ishii, K ( (Electrotech Laboratory) )
Kanemaru, S ( (Electrotech Laboratory) )
Maeda, T ( (Electrotech Laboratory) )
Tautaumi, T ( (Electrotech Laboratory) )
Nagai, K ( (Electrotech Laboratory) )
Sekigawa, T ( (Electrotech Laboratory) )
Hiroshima, H ( (Electrotech Laboratory) )
3 more
Publication title:
Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-3
Pub. date:
1999
Page(from):
260
Page(to):
265
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772259 [1566772257]
Language:
English
Call no.:
E23400/99-3
Type:
Conference Proceedings

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