PHYSICALLY BASED MODELS FOR INIDIUM AND GERMANIUM ION INIPLANIS INTO SILICON

PHYSICALLY BASED MODELS FOR INIDIUM AND GERMANIUM ION INIPLANIS INTO SILICON

Author(s):

Taseb, A.F.

Publication title:

Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-2

Pub. Year:

1999

Page(from):

33

Page(to):

45

Pages:

13

Pub. info.:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772242 [1566772249]

Language:

English

Call no.:

E23400/99-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00013932
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 195th
Conf. info. (Venue):	Seattle, Washington, USA
Conf. info. (Date):	1999.05.05-1999.05.06

Similar Items:

1 Conference Proceedings WindSat physically based forward model: atmospheric component Wang, N.-Y., Chang, P.S., Bettenhausen, M., Bevilacqua, R. M., Gaiser, P. W. SPIE - The International Society of Optical Engineering	7 Conference Proceedings Silicon germanium quantum cascade heterostructures for far-infrared emission (Invited Paper) Kelsall, R.W., Ikonic, Z., Harrison, P., Lynch, S.A., Bates, R., Paul, D.J., Norris, D.J., Liew, S.L., Cullis, A.G., … SPIE-The International Society for Optical Engineering
2 Conference Proceedings Terahertz emission from Silicon-Germanium quantum cascades Kelsall, R. W., Ikonic, Z., Harrison, P., Lynch, S. A., Bates, R., Paul, D. J., Norris, D. J., Liew, S. L., Cullis, A. … Kluwer Academic Publishers	8 Conference Proceedings Experimental verification of a new physically based low-energy (<5 keV) ion implant model Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C.M., Jackson,J., Baumann,S., Tasch,A.F. SPIE-The International Society for Optical Engineering
3 Conference Proceedings Diffusion of Ion-Implanted Boron and Silicon in Germanium Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G. Materials Research Society	9 Conference Proceedings Atomic Interdiffusion in Amorphous Silicon and Germanium Persans, P. D., Ruppert, A. F. Materials Research Society
4 Conference Proceedings Infrared absorption of Czochralski germanium and silicon Peters,J.E., Ownby,P.D., Poznich,C.R., Richter,J.C., Thomas,D.W. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Physically-Based Model of Thermoplastics Injection Molding Dynamics Rafizadeh M., Patterson I. W., Kamal R. M. Society of Plastics Engineers, Inc. (SPE)
5 Conference Proceedings Modelling Discontinuous Dynamic Recrystallization Using a Physically-Based Model for Nucleation D.G. Cram, H.S. Zurob, Y.J.M. Bréchet, C.R. Hutchinson Trans Tech Publications	11 Conference Proceedings Surface Potentials of Conjugated Molecular on Metal Surfaces: Measurements Using Electrostatic Force Microscopy and Calculations Using a Preliminary … Howell, S., Kuila, D., Ghosh, A. W., Rakshit, T., McNally, H., Janes, D., Datta, S., Kasibhatla, B., Kubiak, C., … Materials Research Society
6 Conference Proceedings A Physically Based Predictive Model of Charge Trapping in Gate Oxides Lenahan, P.M., Conley, J.F., Wallace, B.D. Electrochemical Society	12 Conference Proceedings SOLUTE BINDING AT VOID SURFACES IN SILICON AND GERMANIUM Myers, S.M., Bishop, D.M., Follstaedt, D.M., Stein, H.J., Wampler, W.R. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12