Point Defect Generation by the Stress Due to Impurity Doping in Silicon Crystal

Point Defect Generation by the Stress Due to Impurity Doping in Silicon Crystal

Author(s):

Publication title:

Proceedings of the Third International Symposium on Defects in Silicon

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-1

Pub. Year:

1999

Page(from):

491

Page(to):

498

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772235 [1566772230]

Language:

English

Call no.:

E23400/99-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013931
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Defects in Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 195th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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