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High Performance Silicon Wafer with Wide Grown-in Void Free Zone and High Density Internal Gettering Site Achieved via Rapid Crystal Growth with Nitrogen Doping and High Temperature Hydrogen and/or Argon Annealing

Author(s):
Publication title:
Proceedings of the Third International Symposium on Defects in Silicon
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
99-1
Pub. date:
1999
Page(from):
456
Page(to):
467
Pages:
12
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772235 [1566772230]
Language:
English
Call no.:
E23400/99-1
Type:
Conference Proceedings

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