Modeling for the Formation of Multiple-Type COPs in Cz-Si
- Author(s):
- Park, B.-M.
- Publication title:
- Proceedings of the Third International Symposium on Defects in Silicon
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 99-1
- Pub. Year:
- 1999
- Page(from):
- 446
- Page(to):
- 455
- Pages:
- 10
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566772235 [1566772230]
- Language:
- English
- Call no.:
- E23400/99-1
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si
Electrochemical Society, SPIE-The International Society for Optical Engineering |
Electrochemical Society |
8
Conference Proceedings
Relation Between Oxygen Precipitation and Minority Carrier Lifetime in Cz-Si Crystal
Electrochemical Society |
3
Conference Proceedings
Effect of High Temperature RTA on Precipitate Formation and the COP Dissolution
Electrochemical Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
6
Conference Proceedings
The Time Dependence of Point Defect Behavior near the Growth Interface in Cz-Si
Electrochemical Society |
SPIE-The International Society for Optical Engineering |