Dominant Chemical Reaction and Species for Silicon Epitaxial Growth in SiHCI3-H2 System at Atmospheric Pressure in a Horizontal Cold-Wall Reactor

Dominant Chemical Reaction and Species for Silicon Epitaxial Growth in SiHCI3-H2 System at Atmospheric Pressure in a Horizontal Cold-Wall Reactor

Author(s):

Publication title:

Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-23

Pub. Year:

1998

Page(from):

239

Page(to):

245

Pages:

7

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772174 [1566772176]

Language:

English

Call no.:

E23400/98-23

Type:

Conference Proceedings

Details

TDL ID:	ZA00013926
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis
Conf. info. (Number):	1st
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.00.00

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