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The Effect of Geometric Overlapping Capacitance on Leakage of a-Si:H Thin Film Transistors

Author(s):
Publication title:
Proceedings of the fourth Symposium on Thin Film Transistor Technologies
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-22
Pub. Year:
1998
Page(from):
256
Page(to):
264
Pages:
9
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772167 [1566772168]
Language:
English
Call no.:
E23400/98-22
Type:
Conference Proceedings

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