*Low defect density GaN-based substrates grown by HVPE

*Low defect density GaN-based substrates grown by HVPE

Author(s):

Publication title:

Proceedings of the third Symposium on III-V Nitride Materials and Processes

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-18

Pub. Year:

1998

Page(from):

79

Page(to):

86

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772129 [1566772125]

Language:

English

Call no.:

E23400/98-18

Type:

Conference Proceedings

Details

TDL ID:	ZA00013921
Series ID:	PA00000028
Conf. info. (Name):	Symposium on III-V Nitride Materials and Processes
Conf. info. (Number):	3rd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.01-1998.11.06

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