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The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behaviour

Author(s):
Publication title:
Proceedings of the Fifth International Symposium on High Purity Silicon V
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-13
Pub. Year:
1998
Page(from):
135
Page(to):
146
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772075 [1566772079]
Language:
English
Call no.:
E23400/98-13
Type:
Conference Proceedings

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