Recent Progress in Understanding Oxygen Precipitation in Silicon

Recent Progress in Understanding Oxygen Precipitation in Silicon

Author(s):

Vanhellemont, J.

Publication title:

Proceedings of the Fifth International Symposium on High Purity Silicon V

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-13

Pub. Year:

1998

Page(from):

101

Page(to):

124

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772075 [1566772079]

Language:

English

Call no.:

E23400/98-13

Type:

Conference Proceedings

Details

TDL ID:	ZA00013916
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Elecrochemical Society
Conf. info. (Number):	5th ; 194th
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.02-1998.11.06

Similar Items:

1 Conference Proceedings Simulation of grown-in voids in Czochralski silicon crystals Dornberger, E., Esfandyari, J., Graef, D., Vanhellemont, J., Lambert, U., Dupret, F., von Ammon, W. Electrochemical Society	7 Conference Proceedings On the Nature of Grown-In Defects in Silicon: Dependence on Pulling Conditions and Evolution During Thermal Treatments Vanhellemont, J., Kissinger, G., Senkader, S., Graef, D., Kenis, K., Depas, M., Lambert, U., Wagner, P. Electrochemical Society
2 Conference Proceedings SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL Dornberger, E., Esfandyari, J., Vanhellemont, J., Graef, D., Lambert, U., Dupret, F., von Ammon, W. Electrochemical Society	8 Conference Proceedings Defects in as-grown silicon and their evolution during beat treatments Vanhellemont,J., Doruberger,E., Esfandyari,J., Kissinger,G., Trauwaert,M.-A., Bender,H., Graf,D., Lambert,U., … Trans Tech Publications
3 Conference Proceedings Computer Simulation of Oxygen Precipitation by Considering a Temperature Dependent Interfacial Energy Esfandyari, J., Vanhellemont, J., Obermeier, G. Electrochemical Society	9 Conference Proceedings D-defects and metal-related flow patterns Kissinger, G., Morgenstern, G., Richter, H., Vanhellemont, J., Graef, D., Lambert, U., von Ammon, W., Wagner, P. Electrochemical Society
4 Conference Proceedings Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich Kissinger, G., Morgenstern, G., Grabolla, T., Richter, H., Vanhellemont, J., Lambert, U., Graef, D. Electrochemical Society	10 Conference Proceedings Investigation of crystal defects in as-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering tomography Kissinger, G., Vanhellemont, J., Graef, D., Zulehner, W., Claeys, C., Richter, H. Electrochemical Society
5 Conference Proceedings CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS Kissinger, G., Vanhellemont, J., Lambert, U., Dornberger, E., Sorge, R., Morgenstern, G., Grabolla, T., Graef, D., von … Electrochemical Society	11 Conference Proceedings On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon Vanhellemont, J., Kaniava, A., Libezny, M., Simoen, E., Kissinger, G., Gaubas, E., Claeys, C., Clauws, P. MRS - Materials Research Society
6 Conference Proceedings Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing Kissinger, G., Grabolla, T., Morgenstern, G., Richter, H., Graef, D., Vanhellemont, J., Lambert, U., von Ammon, W. Electrochemical Society	12 Conference Proceedings The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers Dornberger, E., von Ammon, W., Graef, D., Lambert, U., Miller, A., Oelkrug, H., Ehlert, A. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12