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The use of amorphous SiO and SiO2 to passivate AuGe based ohmic contact for GaAs ICs

Author(s):
LaRoche, J.R.
Ren, F.
Lothian, J.R.
Hong, J.
Lambers, E.
Pearton, S.J.
1 more
Publication title:
Compound semiconductor power transistors and : State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIX)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-12
Pub. Year:
1998
Page(from):
238
Page(to):
244
Pub. info.:
Pennington, N. J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772228 [1566772222]
Language:
English
Call no.:
E23400/98-12
Type:
Conference Proceedings

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