Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma

Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma

Author(s):

Publication title:

Proceedings of the twelfth International Symposium on Plasma Processing

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-4

Pub. Year:

1998

Page(from):

94

Page(to):

100

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771986 [1566771986]

Language:

English

Call no.:

E23400/98-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00013907
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Plasma Processing ; Meeting of the Electrochemical Scoety
Conf. info. (Number):	12th ; 193rd
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1998.05.03-1998.05.08

Similar Items:

1 Conference Proceedings Atomic-Order Side-Wail Passivation with Nitrogen in ECR Plasma Etching of Si Matsuura, T., Seino, T., Murota, J. Electrochemical Society	7 Conference Proceedings Self-Limited Fractional Atomic-Layer Etching of Si Matsuura, T., Suzue, K., Murota, I., Sawada, Y. Electrochemical Society
2 Conference Proceedings Atomic-Order Nitridation of Si By Radical- and Ion-Induced Reactions using an Ultraclean ECR Nitrogen Plasma Seino, T., Matsuura, T., Murota, J. Electrochemical Society	8 Conference Proceedings Atomic-Layer Adsorption of P on Si(l00) by Using Ultraclean LPCVD Shimamune, Y., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society
3 Conference Proceedings Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures Watanabe, T., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society	9 Conference Proceedings Atomic-Layer Nitridation of Si(l 00) By NH3 Using Flash Heating Watanabe, T., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society
4 Conference Proceedings Si Epitaxial Growth on Atomic-Order Nitrided Si (100) using an ECR Plasma Mori, M., Seino, T., Muto, D., Sakuraba, M., Murota, J. Electrochemical Society	10 Conference Proceedings ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL SABILITY Jeong, Y., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society
5 Conference Proceedings Surface Adsorption and Reaction of Chlorine on Impurity-Doped Si Using an ECR Plasma Kanetsuna, T., Matsuura, T., Murota, J. Electrochemical Society	11 Conference Proceedings ATOMIC-LAYER DOPING OF N IN Si EPITAXIAL GROWTH ON Si(100) AND ITS THERMAL STABILITY Jeong, Y., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society
6 Conference Proceedings Comparison of Polysilicon Etching between Pure and Nitrogen Added Chlorine ECR Plasmas Matsuura, T., Murota, J., Ono, S., Ohmi, T. Electrochemical Society	12 Conference Proceedings Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH3 Watanabe, T., Ichikawa, A., Sakuraba, M., Matsuura, T., Murota, J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12