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Electron Cyclotron Resonance Chemical Vapor Deposited Silicon Nitride for T-gate Passivation

Author(s):
Ren, F.
LaRoche, J.
Anderson, T.
Pearton, S.J.
Lee, J.W.
Johnson, D.
Lothian, J.R.
Lin, J.
Weiner, J.S.
Shul, R.J.
Wu, C.S.
6 more
Publication title:
Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-2
Pub. date:
1998
Page(from):
513
Page(to):
519
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771948 [1566771943]
Language:
English
Call no.:
E23400/98-2
Type:
Conference Proceedings

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