New n+-GaAs/Δ(p+)-GaInP/n-GaAs Camel-Gate HFET with High Breakdown Voltage and Low Leakage Current
- Author(s):
- Publication title:
- Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 98-2
- Pub. Year:
- 1998
- Page(from):
- 455
- Page(to):
- 460
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771948 [1566771943]
- Language:
- English
- Call no.:
- E23400/98-2
- Type:
- Conference Proceedings
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