Silicon-Containing Crystalline Carbon Nitride: A Novel Wide Band Gap Material
- Author(s):
- Publication title:
- Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 98-2
- Pub. Year:
- 1998
- Page(from):
- 417
- Page(to):
- 433
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771948 [1566771943]
- Language:
- English
- Call no.:
- E23400/98-2
- Type:
- Conference Proceedings
Similar Items:
MRS - Materials Research Society |
MRS - Materials Research Society |
2
Conference Proceedings
Growth of SiCN Crystals Consisting of a Predominantly Carbon Nitride Network
MRS - Materials Research Society |
Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
4
Conference Proceedings
A novel method of photonic band-gap lithography of porous silicon heterostructures
Society of Photo-optical Instrumentation Engineers |
10
Conference Proceedings
On Ultrasonic Characteristics in Carbon/Phenolic Matrix Composite Materials
Trans Tech Publications |
Electrochemical Society |
11
Conference Proceedings
Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
Trans Tech Publications |
6
Conference Proceedings
Photo-ionization of wide band-gap materials by high-intensity laser radiation (Invited Paper) [6261-19]
SPIE - The International Society of Optical Engineering |
12
Conference Proceedings
Two-photon spectroscopy of free-carrier generation in wide-band gap crystals
SPIE-The International Society for Optical Engineering |