Infared LEDs Based on Er Doping of III-V Nitride Semiconductors

Infared LEDs Based on Er Doping of III-V Nitride Semiconductors

Author(s):

Publication title:

Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-2

Pub. Year:

1998

Page(from):

10

Page(to):

18

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771948 [1566771943]

Language:

English

Call no.:

E23400/98-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00013905
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Light Emitting Devices for Optoelectronic Applications ; Meeting of the Electrochemical Society
Conf. info. (Number):	1998 ; 193rd
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1998.05.03-1998.05.08

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