POINT DEFECT INJECTION IN SILICON DURING THIN OXIDE FORMATION

POINT DEFECT INJECTION IN SILICON DURING THIN OXIDE FORMATION

Author(s):

Publication title:

Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

98-1(2)

Pub. Year:

1998

Page(from):

914

Page(to):

925

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771931 [1566771935]

Language:

English

Call no.:

E23400/98-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00013904
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	8th
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1998.05.04-1998.05.08

Similar Items:

1 Conference Proceedings Estimation of the Number of Injected Interstitial Atoms During Nitrous Oxidation of Silicon Skarlatos, D., Giles, L. F., Tsamis, C., Claverie, A., Tsoukalas, D. MRS - Materials Research Society	7 Conference Proceedings Boron TED in Pre-Amorphized Si: Role of the A/C Interface Mathiot, D., Bonafos, C., Omri, M., Alquier, D., Martinez, A., Claverie, A. MRS - Materials Research Society
2 Conference Proceedings Point Defect Injection Kinetics by N2O Oxidation of Silicon Tsamis, C., Kouvatsos, D. N., Tsoukalas, D. MRS - Materials Research Society	8 Conference Proceedings Transient-Enhanced Diffusion of Dopants in Preamorphized Si Layers Claverie, A., Bonafos, C., Omri, M., Mauduit, B. de, Assayag, G. Ben, Martinez, A., Alquier, D., Mathiot, D. MRS - Materials Research Society
3 Conference Proceedings Estimation of Point Defect Fundamental Properties Using SOI Structures and Devices Tsoukalas, D., Tsamis, C., Kouvatsos, D., Skarlatos, D. Electrochemical Society	9 Conference Proceedings On the ｢紜symmetrical｢？Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers Alquier, D., Cowern, N. E. B., Pichler, P., Armand, C., Martinez, A., Mathiot, D., Omri, M., Claverie, A. MRS - Materials Research Society
4 Conference Proceedings Annealing Behavior Of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient Tsamis, C., Skarlatos, D., Raptis, I., Tsoukalas, D., Calvo, P., Colombeau, B., Cristiano, F., Claverie, A. Materials Research Society	10 Conference Proceedings Transient-Enhanced Diffusion of Dopants in Preamorphized Si Layers Claverie, A., Bonafos, C., Omri, M., Mauduit, B. de, Assayag, G. Ben, Martinez, A., Alquier, D., Mathiot, D. MRS - Materials Research Society
5 Conference Proceedings Use of Isotopically Pure Silicon Material to Estimate Silicon Diffusivity in Silicon Dioxide Tsoukalas, D., Tsamis, C., Normand, P. Materials Research Society	11 Conference Proceedings Relative Stability Of Silicon Self-Interstitial Defects Cristiano, Fuccio, Colombeau, Benjamin, Mauduit, Bermadette de, Giles, Felipe, Omri, Mourad, Claverie, Alain Materials Research Society
6 Conference Proceedings Relative Stability of Perfect and Faulted Dislocation Loops in Silicon Omri, M., Mauduit, B. de, Claverie, A. MRS - Materials Research Society	12 Conference Proceedings Photoexcitation Induced Suppression of Point Defect Formation during Ion Implantation in Silicon Cho, C.R., Yarykin, N., Rozgonyi, G.A., Zuhr, R.A. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12