NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON

NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON

Author(s):: Plummer, J.D.
Publication title:: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
Title of ser.:: Electrochemical Society Proceedings Series
Ser. no.:: 98-1(2)
Pub. Year:: 1998
Page(from):: 899
Page(to):: 913
Pages:: 15
Pub. info.:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566771931 [1566771935]
Language:: English
Call no.:: E23400/98-1
Type:: Conference Proceedings

Details

TDL ID:	ZA00013904
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology
Conf. info. (Number):	8th
Conf. info. (Venue):	San Diego, CA, USA
Conf. info. (Date):	1998.05.04-1998.05.08

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