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NVITED: POINT DEFECT BASED MODELING OF DOPANT DIFFUSION AND TRANSIENT ENHANCED DIFFUSION IN SILICON

Author(s):
Plummer, J.D.  
Publication title:
Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
98-1(2)
Pub. date:
1998
Page(from):
899
Page(to):
913
Pages:
15
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771931 [1566771935]
Language:
English
Call no.:
E23400/98-1
Type:
Conference Proceedings

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