A High-Voltage Bipolar Process using 6-Inch Direct Bonding Wafer for ASIC Line
- Author(s):
- Publication title:
- Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 97-36
- Pub. Year:
- 1997
- Page(from):
- 493
- Page(to):
- 500
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771894 [1566771897]
- Language:
- English
- Call no.:
- E23400/97-36
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
A thin SOI Process Using a Bonding and Etch-Back Method Without Epitaxial Growth
Electrochemical Society |
7
Conference Proceedings
Silicon Carbide on Insulator (SiCOI) Structures by Direct Wafer Bonding Process
SPIE-The International Society for Optical Engineering |
2
Conference Proceedings
Silicon direct bonding approach to high voltage power device (insulated gate bipolar transistors)
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
3
Conference Proceedings
High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
5
Conference Proceedings
New Generation of Structures Obtained by Direct Wafer Bonding of Processed Wafers
Electrochemical Society |
Electrochemical Society |
6
Conference Proceedings
Ultra High Precision of the Tilt/Twist Misorientation Angles in Silicon/Silicon Direct Wafer Bonding
Electrochemical Society |
SPIE - The International Society for Optical Engineering |