Besoi using a Silicon Germanium Etch Stop
- Author(s):
- Publication title:
- Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 97-36
- Pub. Year:
- 1997
- Page(from):
- 313
- Page(to):
- 320
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771894 [1566771897]
- Language:
- English
- Call no.:
- E23400/97-36
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
Fabrication and characterisation of Silicon On Insulator substrates incorporating thermal vias.
Kluwer Academic Publishers |
Electrochemical Society |
Electrochemical Society |
3
Conference Proceedings
Characterisation of SOI Thin Film Transistors Fabricated Using SiGe Etch Stop Layers
Electrochemical Society |
Materials Research Society |
4
Conference Proceedings
Low-Temperature Epitaxy of Si/Si1-xGex/Si Multilayers by Low-Pressure RTCVD for Very Thin SOI Applications
MRS - Materials Research Society |
10
Conference Proceedings
Manufacture Processes for WSi2 GPSOI Substrates and Their Influence on Cross-Talk Suppression and Inductance
Electrochemical Society |
Electrochemical Society |
Kluwer Academic Publishers |
6
Conference Proceedings
Silicon Wafer Direct Bonding for Smart-Cut SOI with Buried Tungsten Silicide Layer
Electrochemical Society |
Electrochemical Society |