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Spatial Characterization of Doped SiC Wafers by Raman Spectroscopy

Author(s):
Burton, J.C.
Sun, L.
Pophristic, M.
Lukacs, S.
Cohen, S.
Long, F.H.
Liang, S.
Lu, Y.
Feng, Z.C.
Li, Y.
Tran, C.
6 more
Publication title:
Proceedings of the Second Symposium on III-V Nitride Materials and Processes
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-34
Pub. date:
1997
Page(from):
220
Page(to):
227
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771870 [1566771870]
Language:
English
Call no.:
E23400/97-34
Type:
Conference Proceedings

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