Electrical and Optical Properties of the Device Structures Based on GaN after Dry Etching

Electrical and Optical Properties of the Device Structures Based on GaN after Dry Etching

Author(s):

Usikov, A.S.

Publication title:

Proceedings of the Second Symposium on III-V Nitride Materials and Processes

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-34

Pub. Year:

1997

Page(from):

57

Page(to):

62

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771870 [1566771870]

Language:

English

Call no.:

E23400/97-34

Type:

Conference Proceedings

Details

TDL ID:	ZA00013896
Series ID:	PA00000028
Conf. info. (Name):	Symposium on III-V Nitride Materials and Processes
Conf. info. (Number):	2nd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05

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