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Enhanced Two Dimensional Growth of Low Temperature GaN Buffer Layers by N2 Plasma Pretreatment of Sapphire Substrates

Author(s):
Publication title:
Proceedings of the Second Symposium on III-V Nitride Materials and Processes
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-34
Pub. Year:
1997
Page(from):
25
Page(to):
32
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771870 [1566771870]
Language:
English
Call no.:
E23400/97-34
Type:
Conference Proceedings

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