High Density Plasma Gate Etching of 0.12 um Devices with Sub-1.5 nm Gate Oxides | 東京工業大学附属図書館文献データベース

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High Density Plasma Gate Etching of 0.12 um Devices with Sub-1.5 nm Gate Oxides

Author(s):

Publication title:

Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-30

Pub. Year:

1997

Page(from):

85

Page(to):

95

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771832 [1566771838]

Language:

English

Call no.:

E23400/97-30

Type:

Conference Proceedings

Details

TDL ID:	ZA00013892
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes ; Joint International Meeting of the Electrochemical Society
Conf. info. (Number):	1997 ; 1997
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05

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