Computational Atomic-Scale Study of the Reactivity of Molecular Fragments from SiH4/H2 Plasma with Amorphous Silicon Surfaces

Computational Atomic-Scale Study of the Reactivity of Molecular Fragments from SiH4/H2 Plasma with Amorphous Silicon Surfaces

Author(s):

Publication title:

Proceedings of the International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-30

Pub. Year:

1997

Page(from):

35

Page(to):

46

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771832 [1566771838]

Language:

English

Call no.:

E23400/97-30

Type:

Conference Proceedings

Details

TDL ID:	ZA00013892
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Thin Film Materials, Processes, Reliability, and Applications, Thin Film Processes ; Joint International Meeting of the Electrochemical Society
Conf. info. (Number):	1997 ; 1997
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05

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