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The role of buried oxide in the hot carrier degradation of ultra thin n-channel SOI MOSFETs

Author(s):
Publication title:
Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-23
Pub. date:
1997
Page(from):
277
Page(to):
282
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771764 [1566771765]
Language:
English
Call no.:
E23400/97-23
Type:
Conference Proceedings

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