Finite element analysis of the radial phosphorus dopant distribution in silicon Czochralski-grown single crystals

Finite element analysis of the radial phosphorus dopant distribution in silicon Czochralski-grown single crystals

Author(s):

Sugawara, K.

Publication title:

Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-22

Pub. Year:

1997

Page(from):

50

Page(to):

60

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771757 [1566771757]

Language:

English

Call no.:

E23400/97-22

Type:

Conference Proceedings

Details

TDL ID:	ZA00013884
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Crystalline Defects and Contamination ; Symposium on Silicon Cleaning Technology ; Meeting of the Electrochemical Society ; Annual Meeting of the International Society of Electrochemistry
Conf. info. (Number):	2nd ; 1997 ; 192nd ; 48th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.02

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