Atomic Layer Precise Etching with AsBr3 in Molecular Beam Epitaxy

Atomic Layer Precise Etching with AsBr3 in Molecular Beam Epitaxy

Author(s):

Publication title:

Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-21

Pub. Year:

1997

Page(from):

259

Page(to):

269

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771498 [1566771498]

Language:

English

Call no.:

E23400/97-21

Type:

Conference Proceedings

Details

TDL ID:	ZA00013883
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	27th ; 192nd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05

Similar Items:

1 Conference Proceedings RHEED Intensity Observation of AlAs and GaAs by In Situ Etching Using Arsenic Tribromide Kaneko, T., Sager, T., Eberl, K. MRS - Materials Research Society	7 Conference Proceedings Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy Song, J.D., Park, Y.M, Shin, J.C., Lim, J.G., Park, Y.J., Choi, W.J., Han, I.K., Cho, W.J., Lee, J.I., Kim, H.S., Park, … Materials Research Society
2 Conference Proceedings *BEAM ASSISTED ATOMIC LAYER CONTROLLED EPITAXY AND ETCHING OF GaAs Meguro, T., Aoyagi, Y. Materials Research Society	8 Conference Proceedings MOLECULAR BEAM EPITAXY OF LAYERED Bi-Sr-Ca-Cu-O COMPOUNDS Schlom, D.G., Eckstein, J.N., Bozovic, I., Marshall, A.F., Sizemore, J.T., Chen, Z.J., von Dessonneck, K.E., Harris, … Materials Research Society
3 Conference Proceedings Silicon Molecular Beam Epitaxy Sakamoto T., Sakamoto K., Miki K., Okumura H., Yoshida S., Tokumoto H. Plenum Press	9 Conference Proceedings New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy Piner, E. L., He, Y. W., Boutros, K. S., McIntosh, F. G., Roberts, J. C., Bedair, S. M., El-Masry, N. A. MRS - Materials Research Society
4 Conference Proceedings Molecular Beam Epitaxy of Artificially Layered III-V Semiconductors on an Atomic Scale Ploog K. Plenum Press	10 Conference Proceedings Growth of homoepitaxial GaN layers and GaN/AIGaN multiple quantum wells on GaN single-crystal substrates by molecular-beam epitaxy Kubo, S., Tanabe, T., Konishi, M., Iwata, S., Saimei, T., Kurai, S., Taguchi, T., Kainosho, K., Yokohata, A. SPIE-The International Society for Optical Engineering
5 Conference Proceedings COMPARISON OF THE GaAs LAYERS GROWN ON POROUS Si AND ON Si BY MOLECULAR BEAM EPITAXY Wu, B. J., Wang,, K. L., Mii, Y. J,, Yoon, Y. S., Wu,. A. T., George,T.,, Weber, E. Materials Research Society	11 Conference Proceedings ORDERED TERNARY ALLOYS BY ATOMIC LAYER EPITAXY McDermott, B.T., Reid, K.G., Dip, A., El-Masry, N.A., Bedar, S.M., Duncan, W., Yin, X., Pollak, F.H. Materials Research Society
6 Conference Proceedings Self-Assembled Quantum Dots And Nanoholes By Molecular Beam Epitaxial Growth And Atomically Precise In Situ Etching Kiravittaya, S., Songmuang, R., Schmidt, O.G. Materials Research Society	12 Conference Proceedings ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY Shibata, H., Makita, Y., Yamada, A., Ohnishi, N., Mori, M., Nakayama, Y., Beye, A.C., Mayer, K.M., Takahashi, T., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12