Epitaxial Lateral Overgrowth of Wide Dislocation-Free GaAs on Si Substrate

Epitaxial Lateral Overgrowth of Wide Dislocation-Free GaAs on Si Substrate

Author(s):

Publication title:

Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-21

Pub. Year:

1997

Page(from):

196

Page(to):

200

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771498 [1566771498]

Language:

English

Call no.:

E23400/97-21

Type:

Conference Proceedings

Details

TDL ID:	ZA00013883
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	27th ; 192nd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05

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