Doping of InSb and InAs Using CBr4 During Growth by Gas Source Molecular Beam Epitaxy

Doping of InSb and InAs Using CBr4 During Growth by Gas Source Molecular Beam Epitaxy

Author(s):

Publication title:

Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-21

Pub. Year:

1997

Page(from):

140

Page(to):

148

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771498 [1566771498]

Language:

English

Call no.:

E23400/97-21

Type:

Conference Proceedings

Details

TDL ID:	ZA00013883
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	27th ; 192nd
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1997.08.31-1997.09.05

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