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Hydrogenated Poly-Si TFTs with a Structure of Source Overlap and Drain Offset

Author(s):
Publication title:
Proceedings of the Second International Symposium on Low and High Dielectric Constant Materials : Materials Science, Processing, and Reliability Issues
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-8
Pub. Year:
1997
Page(from):
89
Page(to):
94
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771351 [1566771358]
Language:
English
Call no.:
E23400/97-8
Type:
Conference Proceedings

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