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Bias Dependence of the Transmission Coefficient of Holes Through the Abrupt Emitter-Base Junction of a In0.52Al0.48As/In0.53Ga0.47As Pnp Heterojunction Bipolar Transistor

Author(s):
Publication title:
Proceedings of the Fourth International Symposium on Quantum Confinement : nanoscale materials, devices, and systems
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-11
Pub. date:
1997
Page(from):
444
Page(to):
461
Pages:
18
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771382 [1566771382]
Language:
English
Call no.:
E23400/97-11
Type:
Conference Proceedings

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