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Demonstration of a Y-Branch Switch in Deeply Reactive Ion Etched In0.53Ga0.47As/InP with In-Plane Gates

Author(s):
Publication title:
Proceedings of the Fourth International Symposium on Quantum Confinement : nanoscale materials, devices, and systems
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-11
Pub. date:
1997
Page(from):
221
Page(to):
230
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771382 [1566771382]
Language:
English
Call no.:
E23400/97-11
Type:
Conference Proceedings

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