Coupled Quantum Dot-Based InAs/GaAs Laser Structure Studied by Contactless Electroreflectance and Surface Photovoltage Spectroscopy

Coupled Quantum Dot-Based InAs/GaAs Laser Structure Studied by Contactless Electroreflectance and Surface Photovoltage Spectroscopy

Author(s):

Aigouy, L.

Publication title:

Proceedings of the Fourth International Symposium on Quantum Confinement : nanoscale materials, devices, and systems

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-11

Pub. Year:

1997

Page(from):

146

Page(to):

154

Pages:

9

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771382 [1566771382]

Language:

English

Call no.:

E23400/97-11

Type:

Conference Proceedings

Details

TDL ID:	ZA00013871
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Quantum Confinement ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th ; 191st
Conf. info. (Venue):	Montreal, Quebec, Canada
Conf. info. (Date):	1997.05.04-1997.05.07

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