Characterization of High Quality Nitrided Gate Dielectric Films Manufactured in Reduced Pres-sure Furnace for ULSI CMOS Applications

Characterization of High Quality Nitrided Gate Dielectric Films Manufactured in Reduced Pres-sure Furnace for ULSI CMOS Applications

Author(s):

Publication title:

Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-10

Pub. Year:

1997

Page(from):

418

Page(to):

429

Pages:

12

Pub. info.:

Pennington, New Jersey: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771375 [1566771374]

Language:

English

Call no.:

E23400/97-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00013870
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Conf. info. (Number):	4th
Conf. info. (Venue):	Montreal, QC, Canada
Conf. info. (Date):	1997.05.04-1997.05.09

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