Blank Cover Image

A Physically Based Predictive Model of Charge Trapping in Gate Oxides

Author(s):
Publication title:
Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-10
Pub. Year:
1997
Page(from):
275
Page(to):
284
Pages:
10
Pub. info.:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771375 [1566771374]
Language:
English
Call no.:
E23400/97-10
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Connection Between oxide leakage currents and Si/SIO2 Interface Trap Generation

Lenahan, P.M.

Electrochemical Society
7 Conference Proceedings Spin Dependent Recombination at Deep-Level Centers in 6H Silicon Carbide/Silicon Metal Oxide Semiconductor Field Effect Transistors

Meyer, D.J., Bohna, N.A., Lenahan, P.M., Lelis, A.

Trans Tech Publications
2 Conference Proceedings Defects in HfO₂-Based Dielectric Gate Stacks

Patrick M. Lenahan, Jason Ryan, Corey Cochrane, John Conley

Materials Research Society
8 Conference Proceedings The Effects of Radiation and Charge Trapping on Reliability of Alternative Gate Dielectrics

Felix, J. A., Shaneyfelt, M. R., Schwank, J. R., Dodd, P. E., Fleetwood, D. M., Zhou, X. J., Gusev, E. P.

Springer
3 Conference Proceedings A Review of Electron Spin Resonance Spectroscopy of Defects in Thin Film SiO2 on Silicon

Conley, J., Lenahan, P.

Electrochemical Society
9 Conference Proceedings Definitive Identification of an Important 4H SiC MOSFET Interface/Near Interface Trap

C.J. Cochrane, P.M. Lenahan, A.J. Lelis

Trans Tech Publications
4 Conference Proceedings Electron Spin Resonance Evidence for a Localized EP (E'ｦﾄ-Like) Defect Structure

Conley, John F., Jr., Lenahan, P. M.

MRS - Materials Research Society
10 Conference Proceedings ELECTRICAL PROPERTIES OF METAL-OXIDE-SILICON STRUCTURES WITH SOL-GEL OXIDES

Warren, W.L., Lenahan, P.M., Brinker, C.J.

Materials Research Society
5 Conference Proceedings Oxide Leakage Currents and Oxygen Deficient Silicon

Lenahan, P.M., Mele, J., Fattu, M., Lowry, R.K., Woodbury, D.

Electrochemical Society
11 Conference Proceedings A Physically-Based Continuous Model for Graded-Channel SOI MOSFET

Pavanello, M.A., Ifiiguez, B., Martino, J.A., Flandre, D.

Electrochemical Society
6 Conference Proceedings Atomic Scale Defects Involved in Stress Induced Leakage Currents in Very Thin Oxides on Silicon

Lenahan, P.M., Kang, A.Y., Campbell, J.P.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Two-Way Tunneling Model of Oxide Trap Charging and Discharging in SiC MOSFETs

A.J. Lelis, D.B. Habersat, R. Green, N. Goldsman

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12