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Identification of the Microscopic Structure of New Hot Carrier Damage Centers in Short Chan-nel MOSFETs

Author(s):
Publication title:
Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-10
Pub. Year:
1997
Page(from):
134
Page(to):
142
Pages:
9
Pub. info.:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771375 [1566771374]
Language:
English
Call no.:
E23400/97-10
Type:
Conference Proceedings

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