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Gate-to Drain Capacitance as a Monitor for Hot-Carrier Degradation in Sbmictometer MOSFETs

Author(s):
Ling, C.H.  
Publication title:
Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-10
Pub. date:
1997
Page(from):
101
Page(to):
117
Pages:
17
Pub. info.:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771375 [1566771374]
Language:
English
Call no.:
E23400/97-10
Type:
Conference Proceedings

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