Blank Cover Image

Effect of Interface Stress on Reliability of Gate Oxide

Author(s):
Publication title:
Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-10
Pub. Year:
1997
Page(from):
34
Page(to):
45
Pages:
12
Pub. info.:
Pennington, New Jersey: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771375 [1566771374]
Language:
English
Call no.:
E23400/97-10
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Interface-State Generation In Deposited Oxides Due To Bias Temperature Stress

Bhat, N., Saraswat, K.C.

Electrochemical Society
7 Conference Proceedings Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation

Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J.

Electrochemical Society
2 Conference Proceedings Effect of Annealing Ambient on Performance and Reliability of Low Pressure Chemical Vapor Deposited Oxides for Thin-Film Transistors

Bhat, N., Wang, A., Saraswat, K. C.

MRS - Materials Research Society
8 Conference Proceedings Effect of a silicon interlayer in low-temperature poly-SiGe thin film transistors

Wang,A.W., Saraswat,K.C.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Dependence of Oxide Electric Field and Gate Electrode Work Function on the Reliability of Thin MOS Gate Oxides

Saraswat, K. C., Yang, T., Sachdev, P.

Electrochemical Society
9 Conference Proceedings Comparison of Automated Capacitor Testing Methods for Plasma Charging Induced Damage

Abdel-Ati, W.L.N., Ma, S., Yang, T.-C., McVittie, J.P., Saraswat, K.C.

Electrochemical Society
4 Conference Proceedings Dependence of Reliability of Ultrathin MOS Gate Oxides on the Fermi Level Positions at Gate and Substrate

Yang, Tien-Chun, Bhat, Navakanta, Saraswat, Krishana C.

MRS - Materials Research Society
10 Conference Proceedings Performance Limitations of Si Bulk CMOS and Alternatives for future ULSI

K.C. Saraswat, D. Kim, T. Krishnamohan, A. Pethe

Electrochemical Society
5 Conference Proceedings Effect of Growth Conditions on the Reliability of Ultrathin MOS Gate Oxides

Yang, Tien-Chun, Saraswat, Krishna C.

MRS - Materials Research Society
11 Conference Proceedings TMCTS for Gate Dielectric in Thin-Film Transistors

Wang, Albert W., Bhat, Navakanta, Saraswat, Krishna C.

MRS - Materials Research Society
6 Conference Proceedings Accelerated Breakdown in Thin Oxide Films Due to Interfacial Stress and Carrier Depletion

Subramanian, V., Bhat, N., Saraswat, K.

MRS - Materials Research Society
12 Conference Proceedings Analysis of Interface States in Electrical Stressed Oxynitrided Gate Oxide Using Quasi-Static and Deep level Transient Spectroscopy Measurements

Belkouch, S., Nguyen, T.K., Landsberger, L.M., Aktik, C., Jean, C., Kahrizi, M.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12