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Redidual End-of-Range Damage Reduction in Low-Temperature-Annealed Ion-Implanted Junctions by Using Low-Doped Silicon Substrate

Author(s):
Publication title:
ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-3
Pub. Year:
1997
Page(from):
643
Page(to):
654
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771306 [1566771307]
Language:
English
Call no.:
E23400/970512
Type:
Conference Proceedings

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