In-Sity Boron-Doped Si1-xGex Gate Technology for Submicron NMOS- and PMOS-FETs

In-Sity Boron-Doped Si1-xGex Gate Technology for Submicron NMOS- and PMOS-FETs

Author(s):

Publication title:

ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-3

Pub. Year:

1997

Page(from):

549

Page(to):

560

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771306 [1566771307]

Language:

English

Call no.:

E23400/970512

Type:

Conference Proceedings

Details

TDL ID:	ZA00013864
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Ultralarge Scale Integration Science and Technology
Conf. info. (Number):	6th
Conf. info. (Venue):	Montreal, Quebec, Canada
Conf. info. (Date):	1997.05.05-1997.05.09

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