Ge Profile Optimization Issues for Cryogenically Operated SiGe HBTs

Ge Profile Optimization Issues for Cryogenically Operated SiGe HBTs

Author(s):

Publication title:

Proceedings of the fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-2

Pub. Year:

1997

Page(from):

232

Page(to):

239

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771290 [1566771293]

Language:

English

Call no.:

E23400/970511

Type:

Conference Proceedings

Details

TDL ID:	ZA00013863
Series ID:	PA00000028
Conf. info. (Name):	Symposium on Low Temperature Electronics and High Temperature Superconductivity ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th ; 191st
Conf. info. (Venue):	Montreal, Canada
Conf. info. (Date):	1997.05.04-1997.05.11

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