Collector-Base Barrier Lowering in GaInP/GaAs Double-HBT by Doping-Spike
- Author(s):
- Publication title:
- Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI)
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 97-1
- Pub. Year:
- 1997
- Page(from):
- 208
- Page(to):
- 215
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771283 [1566771285]
- Language:
- English
- Call no.:
- E23400/970510
- Type:
- Conference Proceedings
Similar Items:
Electrochemical Society |
7
Conference Proceedings
STUDY OF GaInP/GaAs/GaInP DOUBLE HETEROSTRUCTURES GROWN BY MOCVD WITH PHOTOREFLECTANCE AND PHOTOLUMINESCENCE
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
5
Conference Proceedings
New n+-GaAs/Δ(p+)-GaInP/n-GaAs Camel-Gate HFET with High Breakdown Voltage and Low Leakage Current
Electrochemical Society |
11
Conference Proceedings
APPLICATION OF GaAs-A1GaAs SUPERLATTICE STRUCTURE FOR FABRICATING HIGH BREAKDOWN VOLTAGE POWER MISFET
Materials Research Society |
6
Conference Proceedings
Reliability of carbon doped base AlGaAs/GaAs HBTs as a function of collector current
MRS - Materials Research Society |
Materials Research Society |