Enhanced Breakdown Voltages in Planar GaAs MESFETs with a Thin GaInP Passivation Layer

Enhanced Breakdown Voltages in Planar GaAs MESFETs with a Thin GaInP Passivation Layer

Author(s):

Publication title:

Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

97-1

Pub. Year:

1997

Page(from):

202

Page(to):

207

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771283 [1566771285]

Language:

English

Call no.:

E23400/970510

Type:

Conference Proceedings

Details

TDL ID:	ZA00013862
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	26th ; 191st
Conf. info. (Venue):	Montreal, Quebec, Canada
Conf. info. (Date):	1997.05.04-1997.05.09

Similar Items:

1 Conference Proceedings Phosphorus Passivation of GaAs Watkins, S. P., Xu, X., Hu, J., Ares, R., Yeo, P., Harrison, D. A., Thewalt, M. L. W., Bolognesi, C. R., Springthorpe, … MRS - Materials Research Society	7 Conference Proceedings METALORGANIC CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY GaAs AND A1GaAs USING TERTIARYBUTYLARSINE Haacke, G., Watkins, S.P., Burkhard, H., Calbick, C. J, Quick, J. Materials Research Society
2 Conference Proceedings New n+-GaAs/Δ(p+)-GaInP/n-GaAs Camel-Gate HFET with High Breakdown Voltage and Low Leakage Current Chang, W.L., Lour, W.S., Young, S.T., Wu, M.Y., Liu, W.C. Electrochemical Society	8 Conference Proceedings APPLICATION OF GaAs-A1GaAs SUPERLATTICE STRUCTURE FOR FABRICATING HIGH BREAKDOWN VOLTAGE POWER MISFET Liu, W.C., Lour, W.S., Wang, R.L., Sun, C.Y., Hsu, W.C. Materials Research Society
3 Conference Proceedings Passivation of shallow acceptors in Si and GaAs by annealing in H2 Veloarisoa,I.A., Kozuch,D.M., Stavola,M., Peale,R.E., Watkins,G.D., Pearton,S.J., Abernathy,C.R., Hobson,W.S. Trans Tech Publications	9 Conference Proceedings GaAs MMICs for a Cryogenically Cooled, 80-110 GHz Planar Receiver Array Archer, J.W., Sevimli, O., Sinclair, M.W., Gough, R.G. Electrochemical Society
4 Conference Proceedings GaInP/GaAs Compatible E/D-Mode d-HEMT's Chen, H.R., Wu, M.-Y., Cheng, P.L., Lai, G.Y., Lour, W.S. Electrochemical Society	10 Conference Proceedings STRUCTURAL CHARACTERIZATION OF THIOPHENE-BASED MONOMERS, POLYMERS, AND OLIGOMERS, AS POWDERS, THICK AND THIN FILMS Bolognesi A., Catellani M., Destri S., Porzio W., Taliani C., Zamboni R., Bruckner S. Plenum Press
5 Conference Proceedings Demonstration of Enhancement-Mode p-Channel GaAs MOSFETs with Ga2O3 (Ga2O3) passivation Ren, F., Hong, M.W., Hobson, W.S., Kuo, J.M., Lothian, J.R., Mannaerts, J.P., Kwo, J., Chu, S.N.G., Chen, Y.K., Cho, … Electrochemical Society	11 Conference Proceedings *Surfactant effects on ordering in GaInP grown by OMVPE Stringfellow, G. B., Fetzer, C. M., Lee, R. T., Jun, S. W., Shurtleff, J. K. MRS-Materials Research Society
6 Conference Proceedings The Effect of Surface Contamination on Avalanche Breakdown in Recessed Al-Gate GaAs MESFETs Hattori, R., Kuragaki, T., Sato, K., Takano, H., Otsubo, M., Mitsui, S. Electrochemical Society	12 Conference Proceedings PHOTO-CVD SILICON NITRIDE FOR GaAs MESFET PASSIVATION Padmanabhan, R., Miller, B. J., Tam, G. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12