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In Situ Etching and Chemical Beam Epitaxy of Carbon-Doped AlxGa1-xAs Using Trisdimethylaminoarsenic

Author(s):
Publication title:
Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI)
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-1
Pub. date:
1997
Page(from):
10
Page(to):
18
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771283 [1566771285]
Language:
English
Call no.:
E23400/970510
Type:
Conference Proceedings

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