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Effect of Processing Temperature on Polysilicon Thin-Film Transistors with Liquid-Phase Deposited Oxide as Gate Insulator

Author(s):
Publication title:
Proceedings of the Third Symposium on Thin Film Transistor Technologies
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
96-23
Pub. Year:
1996
Page(from):
89
Page(to):
94
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771733 [1566771730]
Language:
English
Call no.:
E23400/970103
Type:
Conference Proceedings

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