A Structural and Chemical Investigation of WSi Ohmic Contacts to n+-GaN
- Author(s):
Cole, M.W. Eckart, D.W Han, W.Y. Monahan, T. Ren, F. Pearton, S.J. - Publication title:
- Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV)
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 96-15
- Pub. Year:
- 1996
- Page(from):
- 271
- Page(to):
- 277
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566771658 [156677165X]
- Language:
- English
- Call no.:
- E23400/963435
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN
Electrochemical Society |
7
Conference Proceedings
Formation and Thermal Stability of Ni/Wsi/Ti/Pt Composite Ohmic Contacts to n-SiC for High Power Device Applications
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
3
Conference Proceedings
Ohmic Contacts to III-V Semiconductors: The Relationship Between Interfacial Microstructure and Thermal Treatment
Electrochemical Society |
9
Conference Proceedings
In-BASED OHMIC CONTACTS TO THE BASE LAYER OF GaAs-AlGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Materials Research Society |
4
Conference Proceedings
Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
MRS - Materials Research Society |