Plasma-Induced-Damage of GaN

Plasma-Induced-Damage of GaN

Author(s):

Shul, R.J.

Zolper, J.C.

Hagerott Crawford, M.

Publication title:

Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV)

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-15

Pub. Year:

1996

Page(from):

232

Page(to):

243

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771658 [156677165X]

Language:

English

Call no.:

E23400/963435

Type:

Conference Proceedings

Details

TDL ID:	ZA00013848
Series ID:	PA00000028
Conf. info. (Name):	Symposium on High Speed III-V Electronics for Wireless Applications ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
Conf. info. (Number):	1996 ; 25th ; 190th
Conf. info. (Venue):	San Antonio, Texas, USA
Conf. info. (Date):	1996.10.06-1996.10.11

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